IQE036N08NM6CGSCATMA1 vs IQD005N04NM6CGATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6CGSCATMA1 par Infineon et IQD005N04NM6CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE036N08NM6CGSCATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,88 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier / Format | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 6 (trench FET) |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | — |
| Plage de température de fonctionnement | -55 C to +150 C (junction, per datasheet derating curves) | -55 °C to +150 °C (TJ) |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| Statut RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| Boîtier | — | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| Nombre de broches | — | 9 |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |