IQE036N08NM6CGSCATMA1 vs IQD005N04NM6CGATMA1 比較
詳細な並列比較: IQE036N08NM6CGSCATMA1 メーカー: Infineon および IQD005N04NM6CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQE036N08NM6CGSCATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.88 | $1.62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ / ケース | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 6 (trench FET) |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | — |
| 動作温度範囲 | -55 C to +150 C (junction, per datasheet derating curves) | -55 °C to +150 °C (TJ) |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS ステータス | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| パッケージ | — | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| ピン数 | — | 9 |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |