IQEH46NE2LM7UCGSCATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH46NE2LM7UCGSCATMA1 par Infineon et IQEH50NE2LM7ZCGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 ✓ ActifInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH46NE2LM7UCGSCATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,65 | $1,42 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 7 (Trench-Gate) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TC | 440 A | — |
| Continuous Drain Current (ID) at TA | 57 A | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 150 W | — |
| Maximum On-Resistance (RDS(on)) | 0.46 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Boîtier | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 |
| Type de montage | Surface Mount | Surface Mount |
| Polarity / Channel Type | Single N-Channel | N-Channel |
| Operating Mode | Enhancement-mode | — |
| Topology Suitability | Hard- and soft-switching | — |
| Statut RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Plage de température de fonctionnement | — | -55 degrees C to +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |