IQEH50NE2LM7ZCGATMA1 vs IQE031N08LM6CGSCATMA1 Comparaison
Comparaison détaillée côte à côte de IQEH50NE2LM7ZCGATMA1 par Infineon et IQE031N08LM6CGSCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ ActifInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQEH50NE2LM7ZCGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Plage de température de fonctionnement | -55 degrees C to +175 degrees C | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Boîtier | PG-TTFN-9-3 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | — |
| Statut RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Niveau MSL | — | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Lead-Free | — | Yes |