IQEH50NE2LM7ZCGATMA1 vs IQE031N08LM6CGSCATMA1 비교

다음의 상세 나란히 비교: IQEH50NE2LM7ZCGATMA1 제조: Infineon 및 IQE031N08LM6CGSCATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon

IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon

IQE031N08LM6CGSCATMA1 ✓ 활성

사양 비교

파라미터 IQEH50NE2LM7ZCGATMA1 IQE031N08LM6CGSCATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.42 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 6 (40 V to 100 V)
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
동작 온도 범위 -55 degrees C to +175 degrees C -55 C to +175 C (junction, typical for OptiMOS 6)
패키지 PG-TTFN-9-3 PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate)
실장 유형 Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
RoHS 상태 Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Drain-to-Source Voltage (VDS max) — 80 V
Continuous Drain Current (ID) at Ta=25C — 18 A
Continuous Drain Current (ID) at Tc — 127 A
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 125 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance RDS(on) max — [DATA_NEEDED: RDS(on) at VGS=10 V]
Gate Drive Level — Logic-level
Avalanche Tested — 100% avalanche tested
MSL 레벨 — 1 (per JEDEC J-STD-020, typical for Infineon PQFN)
Lead-Free — Yes

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