IRFB3207ZPBF vs IRFB3306PBF Comparaison
Comparaison détaillée côte à côte de IRFB3207ZPBF par Infineon et IRFB3306PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB3207ZPBF | IRFB3306PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | IR HEXFET (MOSFET) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | -55°C to +175°C |
| Boîtier | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| Type de montage | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Niveau MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 120 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=10V | — | 4.2 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | — | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | — | 230 W |
| RoHS / Lead-Free (PbF) | — | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Body Diode | — | Intrinsic (avalanche-rated) |