IRFB3207ZPBF vs IRFB3306PBF Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRFB3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3207ZPBF | IRFB3306PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | β |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | IR HEXFET (MOSFET) |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55Β°C to +175Β°C |
| Package | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | β |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25Β°C | β | 120 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Rds(on) max @ Vgs=10V | β | 4.2 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) typ | β | [DATA_NEEDED: total gate charge Qg] |
| Gate-Drain Charge (Qgd) typ | β | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25Β°C | β | 230 W |
| RoHS / Lead-Free (PbF) | β | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Body Diode | β | Intrinsic (avalanche-rated) |