IRFML8244TRPBF vs IRFR120NTRPBF Comparaison
Comparaison détaillée côte à côte de IRFML8244TRPBF par Infineon et IRFR120NTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFML8244TRPBF | IRFR120NTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,15 | $0,26 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-to-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) | 5.8 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| RDS(on) max @ VGS=10V | 24 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | 5.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation (PD) max | 1.25 W (Ta) | — |
| Plage de température de fonctionnement | -55 C to +150 C (junction) | — |
| Boîtier | SOT-23-3 (TO-236-3, SC-59) | TO-252AA (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 | — |
| Pin Configuration | Industry-standard SOT-23 pinout (G-D-S) | — |
| Statut RoHS | Compliant (Pb-free, halogen-free) | — |
| Qualification | Consumer grade | — |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Plage de température de jonction en fonctionnement | — | -55C to +175C |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |