IRFR120NTRPBF vs IRFR220NTRPBF Comparaison
Comparaison détaillée côte à côte de IRFR120NTRPBF par Infineon et IRFR220NTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR120NTRPBF | IRFR220NTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,26 | $0,22 |
| Drain-to-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Plage de température de jonction en fonctionnement | -55C to +175C | — |
| Boîtier | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Type de montage | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (IR MOSFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Total Gate Charge (Qg) | — | 15 nC (typical per Mouser listing) |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| Température de jonction en fonctionnement | — | -55°C to +150°C |
| Niveau MSL | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Statut RoHS | — | Compliant (PBF suffix) |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |