IRFR120NTRPBF vs IRFR220NTRPBF 비교

다음의 상세 나란히 비교: IRFR120NTRPBF 제조: Infineon 및 IRFR220NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR120NTRPBF IRFR220NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.26 $0.22
Drain-to-Source Voltage (VDS) 100 V 200 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
동작 접합 온도 범위 -55C to +175C —
패키지 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) HEXFET (IR MOSFET)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
FET Type — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 5 A
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Total Gate Charge (Qg) — 15 nC (typical per Mouser listing)
Maximum Power Dissition (PD) at TC=25°C — 43 W
동작 접합 온도 — -55°C to +150°C
MSL 레벨 — 1 (unlimited floor life per JEDEC J-STD-020)
RoHS 상태 — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

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