IRFS4620TRLPBF vs IRFS4321TRLPBF Comparaison
Comparaison détaillée côte à côte de IRFS4620TRLPBF par Infineon et IRFS4321TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS4620TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge Qg | 25 nC (typical) | — |
| Gate-to-Source Charge Qgs | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge Qgd | [DATA_NEEDED: Qgd] | — |
| Power Dissipation PD at TC=25°C | 144 W | — |
| Température de jonction en fonctionnement | -55°C to +175°C | -55C to +175C |
| Boîtier | D2PAK (TO-263AB), 3-pin (2 leads + tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Type de montage | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ | IR HEXFET (IR MOSFET) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |