IRFS4620TRLPBF vs IRFS4321TRLPBF Comparison
Detailed side-by-side comparison of IRFS4620TRLPBF by Infineon and IRFS4321TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4620TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.73 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25Β°C | 24 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 77.5 mΞ© | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Total Gate Charge Qg | 25 nC (typical) | β |
| Gate-to-Source Charge Qgs | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge Qgd | [DATA_NEEDED: Qgd] | β |
| Power Dissipation PD at TC=25Β°C | 144 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +175C |
| Package | D2PAK (TO-263AB), 3-pin (2 leads + tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFETβ’ | IR HEXFET (IR MOSFET) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Continuous Drain Current (ID) at Tc=25C | β | 85 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | β | 15 mOhm |
| RDS(on) Max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | β | 71 nC |
| Total Gate Charge (Qg) Max | β | 110 nC |
| Power Dissipation (PD) at Tc=25C | β | 350 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | β | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | β | 0.65 C/W (after 1000 cycles -55C to +150C) |