IRLZ34NSTRLPBF vs IRLZ34NPBF Comparaison
Comparaison détaillée côte à côte de IRLZ34NSTRLPBF par Infineon et IRLZ34NPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLZ34NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,58 | $0,65 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC (typical) |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Boîtier | D2PAK (TO-263), surface mount | TO-220AB (through-hole, 3 leads + tab) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Type de montage | Surface Mount | Through Hole |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Statut RoHS | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Type de transistor | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Niveau MSL | — | Not applicable (through-hole) |