IRLZ34NSTRLPBF vs IRLZ34NPBF Comparação
Comparação detalhada lado a lado de IRLZ34NSTRLPBF por Infineon e IRLZ34NPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRLZ34NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,58 | $0,65 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC (typical) |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Faixa de temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| Encapsulamento | D2PAK (TO-263), surface mount | TO-220AB (through-hole, 3 leads + tab) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Tipo de montagem | Surface Mount | Through Hole |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Tipo de transistor | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Temperatura de junção de operação | — | -55 C to +175 C |
| Nível MSL | — | Not applicable (through-hole) |