ISC009N06LM5ATMA1 vs IQE008N03LM5ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC009N06LM5ATMA1 par Infineon et IQE008N03LM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | ISC009N06LM5ATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,86 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5, Source-Down |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Plage de température de fonctionnement | -55 C to +175 C | -55°C to +150°C (typical MOSFET junction rating) |
| Boîtier | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Statut RoHS | Compliant | Compliant (per LCSC listing) |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |