ISC009N06LM5ATMA1 vs IQE008N03LM5ATMA1 비교
다음의 상세 나란히 비교: ISC009N06LM5ATMA1 제조: Infineon 및 IQE008N03LM5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ISC009N06LM5ATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.86 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5, Source-Down |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| 동작 온도 범위 | -55 C to +175 C | -55°C to +150°C (typical MOSFET junction rating) |
| 패키지 | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS 상태 | Compliant | Compliant (per LCSC listing) |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |