ISC033N03LF2SATMA1 vs ISC015N06NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC033N03LF2SATMA1 par Infineon et ISC015N06NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | ISC033N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,81 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | — |
| Part Family | OptiMOS LF2 (<= 40V) | — |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench (<= 40V) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC | 108 A | — |
| Continuous Drain Current (ID) at TA | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Boîtier | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | -55 C to +175 C |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | — |
| Configuration | Single N-channel, source-down | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |