ISC033N03LF2SATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC033N03LF2SATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC033N03LF2SATMA1
ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
ISC033N03LF2SATMA1 β Active
Specification Comparison
| Parameter | ISC033N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | β |
| Part Family | OptiMOS LF2 (<= 40V) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS trench (<= 40V) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TC | 108 A | β |
| Continuous Drain Current (ID) at TA | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | β |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +175 C |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | β |
| Configuration | Single N-channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |