ISK057N04LM6ATSA1 vs ISZ019N03L5SATMA1 Comparaison
Comparaison détaillée côte à côte de ISK057N04LM6ATSA1 par Infineon et ISZ019N03L5SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISK057N04LM6ATSA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,30 | $0,48 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 15 A | — |
| Continuous Drain Current (ID) at Tc=25C | 64 A | — |
| Power Dissipation (PD) at Ta | 2.1 W | — |
| Power Dissipation (PD) at Tc | 39.1 W | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | — |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | — |
| Input Capacitance (Ciss) | 870 pF | 2800 pF at VDS=15V |
| Output Capacitance (Coss) | 290 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Plage de température de fonctionnement | -55C to +150C | -55C to +175C (TJ max) |
| Boîtier | PG-VSON-6-1 (PQFN 2x2 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | — |
| Technology | OptiMOS 6 Trench | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 22 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| RDS(on) at VGS=10V | — | 1.9 mΩ (typical, ID=20A) |
| Gate-Source Voltage Rating (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | 44 nC at VGS=10V |
| Niveau MSL | — | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | — | Compliant |
| Avalanche Rated | — | Yes |
| RG-tested | — | 100% |