ISK057N04LM6ATSA1 vs ISZ019N03L5SATMA1 比較
詳細な並列比較: ISK057N04LM6ATSA1 メーカー: Infineon および ISZ019N03L5SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ 生産中仕様比較
| パラメータ | ISK057N04LM6ATSA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.30 | $0.48 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 15 A | — |
| Continuous Drain Current (ID) at Tc=25C | 64 A | — |
| Power Dissipation (PD) at Ta | 2.1 W | — |
| Power Dissipation (PD) at Tc | 39.1 W | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | — |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | — |
| Input Capacitance (Ciss) | 870 pF | 2800 pF at VDS=15V |
| Output Capacitance (Coss) | 290 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| 動作温度範囲 | -55C to +150C | -55C to +175C (TJ max) |
| パッケージ | PG-VSON-6-1 (PQFN 2x2 mm) | PG-TSDSON-8-FL (5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | — |
| Technology | OptiMOS 6 Trench | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 22 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| RDS(on) at VGS=10V | — | 1.9 mΩ (typical, ID=20A) |
| Gate-Source Voltage Rating (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | 44 nC at VGS=10V |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | — | Compliant |
| Avalanche Rated | — | Yes |
| RG-tested | — | 100% |