K3KL8L80QM-MUCT vs K3KL7L70EM-MGCU Comparaison
Comparaison détaillée côte à côte de K3KL8L80QM-MUCT par Samsung Electronics et K3KL7L70EM-MGCU par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K3KL8L80QM-MUCT | K3KL7L70EM-MGCU |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $13,40 | $12,00 |
| Type de mémoire | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 12 Gbit |
| Organisation de la mémoire | [DATA_NEEDED: organization (xN bit width)] | x32 |
| Débit de données | [DATA_NEEDED: data rate per pin (Gbps)] | [DATA_NEEDED: data rate in Mbps/pin] |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Speed Grade | QM (per Samsung part numbering) | — |
| Boîtier | FBGA (original package, 315-ball class) | 315-ball FBGA |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Interface | LPDDR5X channel interface | LPDDR5X |
| Series | LPDDR5X | — |
| Marque | Samsung Semiconductor | — |
| Packaging Suffix | MUCT | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Segment | Mobile / AI edge computing | — |
| Product Status | — | Mass Production |
| Manufacturer | — | Samsung Semiconductor |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |
| Refresh | — | Self-refresh supported (per LPDDR5X family) |
| Power Modes | — | Deep sleep, self refresh, power down (per LPDDR5X family) |
| Fab Location | — | Johor, Malaysia (listed by distributor) |