K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-ball | Samsung
Référence : K3KL7L70EM-MGCU ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $15 | $15,00 |
| 10 | $14.25 | $142,50 |
| 100 | $13.5 | $1 350,00 |
| 500 | $12.75 | $6 375,00 |
| 1 000 | $12 | $12 000,00 |
K3KL7L70EM-MGCU Présentation
LPDDR5X is the low-power synchronous DRAM standard evolved from LPDDR5, targeting mobile and edge-computing systems where bandwidth-per-watt is the dominant design constraint. In the memory hierarchy, DRAM sits between CPU caches and non-volatile storage (NAND flash, UFS, eMMC), serving as the primary working memory for application processors, AI accelerators, and SoCs. LPDDR5X raises the LPDDR5 interface speed ceiling while reducing operating voltage, delivering higher data rates at lower power than its predecessor.
Key features of the K3KL7L70EM-MGCU include its 12 Gbit density, a x32 memory organization suited to wide-bus mobile and embedded SoC integration, and the compact 315-ball FBGA footprint standard for LPDDR5X class devices. Samsung produces this device at high volume (Johor, Malaysia is listed as one fab location for the family), which supports long-term supply for smartphone, tablet, automotive infotainment, and AI edge module designers.
Architecturally, LPDDR5X devices use dynamic voltage/frequency scaling with multiple power modes (deep sleep, self refresh) to minimize standby current in battery-powered systems. The interface supports bank group architectures and burst access optimized for real-time multimedia and neural-network workloads.
Typical applications include flagship smartphone main memory, AI edge compute modules, automotive digital cockpits and ADAS platforms, and high-bandwidth embedded systems that pair LPDDR5X with Qualcomm or MediaTek application processors.
When designing with this part, signal integrity of the high-speed command/address/data bus is the dominant engineering challenge: matched-length fly-by routing, per-byte termination control, and SoC memory-controller training routines are essential for reliable operation at LPDDR5X data rates.
This page synthesizes verified distributor data, package and organization details, sourcing information, and practical design context not consolidated in any single datasheet listing.
Alternatives de remplacement direct pour K3KL7L70EM-MGCU — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K3KL7L70EM-MGCU (même facteur de forme et même empreinte) — différant par Interface, Package, Density, Data Rate, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K3KL7L70DM-MGCU
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K3KL6L60EM-MGCU
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K3KL8L80EM-MGCU
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K3KL7L70EM-MGCU Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR5X SDRAM |
| Density | 12 Gbit |
| Organisation de la mémoire | x32 |
| Boîtier | 315-ball FBGA |
| Type de montage | Surface Mount (BGA) |
| Product Status | Mass Production |
| Interface | LPDDR5X |
| Manufacturer | Samsung Semiconductor |
| Refresh | Self-refresh supported (per LPDDR5X family) |
| Power Modes | Deep sleep, self refresh, power down (per LPDDR5X family) |
| Fab Location | Johor, Malaysia (listed by distributor) |
Guide de configuration des broches du K3KL7L70EM-MGCU 315-ball fbga
Configuration des broches du K3KL7L70EM-MGCU (boîtier 315-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K3KL7L70EM-MGCU.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K3KL7L70EM-MGCU convient pour 6 applications: Flagship Smartphone Main Memory, AI Edge Compute Modules, Automotive Digital Cockpit, Tablets and 2-in-1 Mobile Devices, 5G Networking and Edge Gateway Equipment, Test, Measurement, and Instrumentation Data Acquisition.
Flagship Smartphone Main Memory
The K3KL7L70EM-MGCU fits flagship smartphone designs as discrete main system memory for Qualcomm or MediaTek application processors. Its LPDDR5X interface delivers higher bandwidth-per-watt than LPDDR5, directly improving sustained gaming, camera pipeline, and on-device AI performance. The 12 Gbit (1.5 GB) x32 organization supports wide memory channels, and the 315-ball FBGA footprint conserves board area in dense smartphone stacks. Placed on the primary memory channel with SoC-controlled per-byte termination, the device runs in self-refresh and deep-sleep modes during idle to preserve battery life; the trade-off is the need for rigorous matched-length routing and memory-controller training during bring-up.
Recommandé
AI Edge Compute Modules
Edge-AI accelerators and compute modules pair LPDDR5X with NPUs that stream neural-network weights continuously, making DRAM bandwidth the throughput bottleneck. The K3KL7L70EM-MGCU's LPDDR5X interface and 12 Gbit capacity support large on-device model footprints while its low operating voltage keeps module thermal budgets manageable in fanless enclosures. The x32 organization matches SoC memory controllers in edge-AI SoCs. In a typical module, one or two devices sit on the main channel near the SoC with per-byte data termination; the quantified benefit is higher sustained inference throughput per watt than LPDDR4X-based modules, at the cost of stricter layout rules for signal integrity at LPDDR5X speeds.
Recommandé
Automotive Digital Cockpit
Digital cockpits render multiple high-resolution displays from a single automotive SoC, demanding both high bandwidth and low power. LPDDR5X class memory such as the K3KL7L70EM-MGCU provides the streaming bandwidth for multi-display graphics, and its low voltage reduces dissipation inside sealed cockpit head units. The 315-ball FBGA suits the tight PCB area of automotive clusters. Designers should note that this MPN is not verified as AEC-Q100 qualified in available data; for safety-relevant designs, request Samsung's automotive-qualified LPDDR variants and qualification documentation. Thermal design must account for sustained graphics workloads coupling DRAM and SoC heat into a shared heatsink structure.
Recommandé
Tablets and 2-in-1 Mobile Devices
Tablets balance battery life, thermals, and multitasking performance, which aligns well with the K3KL7L70EM-MGCU's LPDDR5X characteristics: high data rate for responsive app switching and 4K media pipelines, low operating voltage for passive-cooled enclosures. The 12 Gbit device slots into a single x32 channel for mid-range tablets or pairs across channels in premium models. In battery-powered operation, self-refresh and deep-sleep modes minimize standby drain between use sessions. Compared with soldered LPDDR4X, LPDDR5X raises the bandwidth ceiling for future OS and AI feature updates, making it the forward-looking choice for long-lifecycle tablet platforms.
Recommandé
5G Networking and Edge Gateway Equipment
5G small cells, edge gateways, and network appliances use LPDDR5X as packet-buffer and control-plane memory for SoCs handling high concurrent session counts. The K3KL7L70EM-MGCU's LPDDR5X bandwidth supports line-rate packet classification and cryptography workloads, while the 315-ball FBGA integrates into dense networking board layouts. Its low power profile suits passively cooled outdoor enclosures where every watt of dissipation matters. The x32 wide organization simplifies connection to networking SoCs with wide memory controllers. Designers should implement the SoC vendor's fly-by routing and termination reference design and budget DRAM refresh overhead into buffer-sizing calculations.
Recommandé
Test, Measurement, and Instrumentation Data Acquisition
High-speed oscilloscopes, logic analyzers, and data-acquisition instruments require deep capture memory with sustained write bandwidth. LPDDR5X devices such as the K3KL7L70EM-MGCU provide streaming bandwidth for continuous acquisition into a ring-buffer architecture, and the 12 Gbit capacity extends record length within a compact 315-ball FBGA footprint. Compared with DDR4 SODIMM-based designs, discrete LPDDR5X reduces trace length and enables tighter timing margins. Instrument designers typically place the DRAM close to the acquisition ASIC with controlled-impedance routing and rely on controller training to maximize timing margin across temperature, which is critical for calibration stability in benchtop instruments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K3KL7L70EM-MGCU — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K3KL7L70DM-MGCU | K3KL6L60EM-MGCU | K3KL8L80EM-MGCU |
|---|---|---|---|---|
| Package | 315-ball FBGA (LPDDR5X) | 315-ball FBGA - same family | 315-ball FBGA - same family | 315-ball FBGA - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Interface | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Typical Application | Smartphone / edge-AI main memory | Mobile / edge-AI main memory | Cost-optimized mobile memory | High-capacity mobile / networking memory |
| Controller Re-validation Needed on Swap | N/A | Minimal - same family ball map; verify speed grade | Yes - update memory device list for density | Yes - update memory device list for density |
Principaux différenciateurs
- LPDDR5X bandwidth-per-watt advantage over LPDDR5/LPDDR4X (vs K3KL6L60EM-MGCU (LPDDR5X same-family) and LPDDR4X-class parts)
- Same-footprint density scaling within Samsung family (vs K3KL8L80EM-MGCU / K3KL6L60EM-MGCU)
- Mass production status for supply continuity (vs Sampling-stage or EOL LPDDR5X parts)
Notes de conception
LPDDR5X data rates demand disciplined routing: matched-length constraints on all command/address and data-byte groups, controlled impedance, and solid reference planes under every signal layer. Follow the SoC vendor's fly-by/termination reference design and the Samsung LPDDR5X layout guideline. The memory controller must run read/write training at boot; design the PCB so training can converge with margin (avoid stubs, keep data traces on one layer pair where possible). Simulate the channel with IBIS-AMI models before fab.
LPDDR5X operates with separate core and I/O voltage rails with dynamic voltage/frequency scaling managed by the controller. Use a PMIC with LPDDR5X-specific rail sequencing and voltage tracking, and confirm rail ramp-order requirements with the Samsung datasheet before power-tree sign-off. In battery designs, verify that deep-sleep and self-refresh currents in your operating profile meet standby targets; idle-time power can dominate overall battery impact in mobile use cases.
Do not assume cross-brand LPDDR5X (Micron, SK hynix) parts are drop-in replacements: ball maps, boot sequences, and mode-register defaults differ, requiring controller firmware changes and channel re-simulation. Also verify package identity early - one Alibaba listing for this MPN referenced a 436-ball LPDDR5 variant, while authoritative broker listings identify 315-ball LPDDR5X. Confirm against the official Samsung datasheet before PCB layout is frozen.
In mobile and cockpit designs, the LPDDR5X package often shares the heat spreader path with the application processor. Estimated: sustained bandwidth operation raises package temperature above ambient by tens of degrees Celsius depending on stackup and thermal interface; verify junction temperatures across worst-case workloads and confirm refresh behavior across the full operating temperature range in system-level thermal testing.
Informations de conformité
Compliance data not present in verified web listings. Samsung mass-production memory is typically RoHS compliant, but this must be confirmed from the official product document before design-in. Not verified as AEC-Q100 automotive qualified for this MPN.