K3LK4L40DM-BGCT vs MT40A512M8RH-075E:B Comparaison
Comparaison détaillée côte à côte de K3LK4L40DM-BGCT par Samsung Electronics et MT40A512M8RH-075E:B par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ ActifMicron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActifComparaison des spécifications
| Paramètre | K3LK4L40DM-BGCT | MT40A512M8RH-075E:B |
|---|---|---|
| Marque | Samsung Electronics | Micron Technology |
| Catégorie | DRAM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $40,50 | $2,15 |
| Type de mémoire | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 4 Gbit |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Débit de données | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latence CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Niveau MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organisation de la mémoire | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Type d'interface | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tension de référence | — | On-die internal adjustable VREFDQ generation |
| Boîtier | — | 78-FBGA (9 x 10.5 mm), TFBGA |
| Refresh | — | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |