K9CHGY8S5C-CCK0 vs K9EUGY8S0M-BCK0 Comparaison
Comparaison détaillée côte à côte de K9CHGY8S5C-CCK0 par Samsung Electronics et K9EUGY8S0M-BCK0 par Samsung Electro-Mechanics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifSamsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9CHGY8S5C-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electro-Mechanics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Boîtier | BGA-316 | [DATA_NEEDED: package type and dimensions] |
| Organisation de la mémoire | x8 (8-bit data access), quad CE configuration | [DATA_NEEDED: organization x8/x16] |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: memory density] |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Type de montage | Surface Mount (BGA reflow) | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Product Family | — | K9-series V-NAND Flash |
| Type de mémoire | — | NAND Flash (non-volatile) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Tension d'alimentation | — | [DATA_NEEDED: VCC voltage] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |