K9CHGY8S5C-CCK0 vs K9EUGY8S0M-BCK0 Vergleich
Detaillierter Direktvergleich von K9CHGY8S5C-CCK0 von Samsung Electronics und K9EUGY8S0M-BCK0 von Samsung Electro-Mechanics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ AktivSamsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ AktivSpezifikationsvergleich
| Parameter | K9CHGY8S5C-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Gehäuse | BGA-316 | [DATA_NEEDED: package type and dimensions] |
| Speicherorganisation | x8 (8-bit data access), quad CE configuration | [DATA_NEEDED: organization x8/x16] |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: memory density] |
| Schnittstellentyp | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Montageart | Surface Mount (BGA reflow) | Surface Mount |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Product Family | — | K9-series V-NAND Flash |
| Speichertyp | — | NAND Flash (non-volatile) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Versorgungsspannung | — | [DATA_NEEDED: VCC voltage] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |