K9DVGY8J5M vs K9FGGY8J5A-BCK0 Comparaison

Comparaison détaillée côte à côte de K9DVGY8J5M par Samsung Electronics et K9FGGY8J5A-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Actif
Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ Actif

Comparaison des spécifications

Paramètre K9DVGY8J5M K9FGGY8J5A-BCK0
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs Memory ICs
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $1,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Type d'interface [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Package Type [DATA_NEEDED: package type and dimensions] —
Type de montage Surface Mount Surface Mount
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Product Family — K9 Series NAND Flash
Technology — 3D V-NAND
Type de mémoire — NAND Flash (non-volatile)
Organisation de la mémoire — [DATA_NEEDED: organization]
Cell Type — [DATA_NEEDED: cell type TLC/MLC]
Supply Voltage VCC — [DATA_NEEDED: supply voltage]
VCCQ Voltage — [DATA_NEEDED: VCCQ]
Interface — [DATA_NEEDED: interface type/toggle mode]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Boîtier — [DATA_NEEDED: package and ball count]
Speed Grade Suffix — BCK0
Niveau MSL — [DATA_NEEDED: MSL level]

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