K9DVGY8J5M vs K9FGGY8J5A-BCK0 Comparação

Comparação detalhada lado a lado de K9DVGY8J5M por Samsung Electronics e K9FGGY8J5A-BCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Ativo
Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ Ativo

Comparação de especificações

Parâmetro K9DVGY8J5M K9FGGY8J5A-BCK0
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Tipo de interface [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Package Type [DATA_NEEDED: package type and dimensions] —
Tipo de montagem Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Product Family — K9 Series NAND Flash
Technology — 3D V-NAND
Tipo de memória — NAND Flash (non-volatile)
Organização da memória — [DATA_NEEDED: organization]
Cell Type — [DATA_NEEDED: cell type TLC/MLC]
Supply Voltage VCC — [DATA_NEEDED: supply voltage]
VCCQ Voltage — [DATA_NEEDED: VCCQ]
Interface — [DATA_NEEDED: interface type/toggle mode]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Encapsulamento — [DATA_NEEDED: package and ball count]
Speed Grade Suffix — BCK0
Nível MSL — [DATA_NEEDED: MSL level]

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação