K9EUGY8S0M-CCK0 vs K9CHGY8S5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9EUGY8S0M-CCK0 par Samsung Electronics et K9CHGY8S5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9EUGY8S0M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory | NAND Flash Memory |
| Density | [DATA_NEEDED: total device density in Gb] | [DATA_NEEDED: total density in Gb] |
| Cell Type | TLC (3 bits per cell) | — |
| V-NAND Layers | [DATA_NEEDED: layer count] | — |
| Interface | [DATA_NEEDED: interface type, e.g. Toggle DDR] | — |
| Supply Voltage VCC | [DATA_NEEDED: VCC core supply voltage] | — |
| Supply Voltage VCCQ | [DATA_NEEDED: VCCQ I/O supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Package Type | [DATA_NEEDED: FBGA ball count and dimensions] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Grade Suffix | CCK0 (standard commercial grade) | — |
| Type de montage | Surface Mount (BGA) | Surface Mount (BGA reflow) |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Boîtier | — | BGA-316 |
| Organisation de la mémoire | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Type d'interface | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |