K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung
Référence : K9EUGY8S0M-CCK0 ✓ Actif| Qté | Prix unitaire | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9EUGY8S0M-CCK0 Présentation
NAND flash is a non-volatile memory category within the broader memory-IC hierarchy (NAND flash -> solid-state storage memory -> semiconductor memory). Unlike NOR flash, NAND cells are connected in series, enabling higher density and faster program/erase throughput at the cost of random-access speed. Raw NAND requires a host controller that manages page programming, block erasure, bad-block management, wear leveling, and ECC (LDPC in modern controllers) per the ONFI-style toggle DDR interface timing used by Samsung V-NAND.
Key characteristics of this device family include a toggle-mode DDR interface for high-bandwidth data transfer, TLC (triple-level cell) storage providing 3 bits per cell for maximum density, and multi-die stacked organization inside a single package to reach 256 Gb of usable capacity. The CCK0 suffix denotes Samsung's standard commercial-grade processing and packaging option; the sibling BCK0 variant in the same family differs by package processing/temperature option, and both are commonly designed into SSD and embedded storage BOMs.
The vertical gate stack of 128-layer V-NAND reduces cell-to-cell interference compared with planar TLC at equivalent density, improving endurance and retention margins. Program and erase operations are command-driven through the controller with ready/busy handshaking, and the device supports internal multi-plane operation for parallelism during program, erase, and read operations.
Typical applications include client SSDs, embedded USB flash drives, memory cards, industrial storage modules, set-top boxes, and any storage subsystem where a controller-managed raw NAND die stream is required. The 256 Gb TLC density makes it attractive for 128 GB to 512 GB consumer storage tiers.
Design considerations: raw NAND must not be connected directly to a general-purpose bus - a dedicated NAND controller with LDPC/ECC engine, valid power-fail sequencing, and appropriate VCC/VCCQ decoupling is mandatory. Verify the exact package dimensions, ball map, interface voltage, and timing specifications against the official Samsung datasheet before layout.
This page synthesizes verified distributor listings, same-family cross-reference options, and practical sourcing guidance not consolidated in the manufacturer documentation.
Alternatives de remplacement direct pour K9EUGY8S0M-CCK0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9EUGY8S0M-CCK0 (même facteur de forme et même empreinte) — différant par Memory Type, Product Family, Mounting Type, Product Type, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9EUGY8S0M-BCK0
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9DUGY8S0M-CCK0
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9DUGY8S0M-BCK0
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9CHGY8S5C-CCK0
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9HQGY8S5M
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9PRGY8S7M-CCK0
✅ Remplacement direct✓ En stock
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Voir la fiche technique →K9EUGY8S0M-CCK0 Valeurs maximales et caractéristiques électriques
| Manufacturer | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory |
| Cell Type | TLC (3 bits per cell) |
| Grade Suffix | CCK0 (standard commercial grade) |
| Type de montage | Surface Mount (BGA) |
Guide de configuration des broches du K9EUGY8S0M-CCK0 standard
Configuration des broches du K9EUGY8S0M-CCK0 (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9EUGY8S0M-CCK0.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9EUGY8S0M-CCK0 convient pour 6 applications: Client SSD Storage, Embedded USB Flash Drives, Memory Cards, Industrial Storage Modules, Set-Top Box and Smart TV Storage, Networking and Router Storage.
Client SSD Storage
The K9EUGY8S0M-CCK0 fits client SSD designs where 256 Gb-class TLC V-NAND provides the best balance of density, endurance, and per-bit cost for mainstream consumer capacity points. Placed behind an SSD controller with an LDPC ECC engine, the TLC cells deliver multi-terabyte DWPD-class endurance appropriate for boot and general-purpose drives. Its toggle-mode interface sustains the sequential bandwidth that PCIe and SATA controllers expect, and multi-plane operation parallelizes program and erase to keep queue depths serviced. Designers should verify the controller's supported NAND profile list includes this Samsung generation before board bring-up.
Recommandé
Embedded USB Flash Drives
USB flash controller vendors pair K9EUGY8S0M-CCK0-class TLC V-NAND with single-chip USB 3.x controllers to build 32 GB-per-die-tier flash drives. The 256 Gb density keeps the BOM to one or two packages for mainstream capacities, cutting cost and PCB area versus lower-density planar NAND. Because USB controllers handle ECC, wear leveling, and bad-block management internally, the raw V-NAND drops into a reference design with minimal firmware change - provided the controller firmware image supports this Samsung generation's toggle timing. Thermal design should confirm the FBGA stays within datasheet limits under sustained sequential write loads.
Recommandé
Memory Cards
SD and microSD card manufacturers use K9EUGY8S0M-CCK0-class 256 Gb TLC V-NAND inside molded card assemblies, where package height and power draw are tightly constrained. V-NAND's vertical stack delivers high capacity in a small footprint, and TLC density keeps per-card BOM cost competitive in consumer price tiers. The card controller manages program/erase cycling and LDPC decoding, so the NAND must appear on the controller's qualified list. Designers should validate that read current stays within the card's power budget on mobile hosts, and confirm grade-suffix definitions cover the consumer temperature envelope for the target card class.
Recommandé
Industrial Storage Modules
In industrial storage - rugged SSDs, logging recorders, and embedded modules - K9EUGY8S0M-CCK0 serves as the storage element behind an industrial controller with enhanced ECC and power-fail protection. TLC V-NAND suits read-mostly and moderate-write industrial workloads; write-heavy logging should employ SLC-cache firmware or pSLC mode where the controller supports it. Verify the CCK0 grade's operating temperature range against the module spec, and design power-fail circuitry so in-flight program operations do not corrupt data. Industrial customers typically require vendor-managed change notification, so confirm Samsung lifecycle status before design-in.
Recommandé
Set-Top Box and Smart TV Storage
Set-top boxes and smart TVs store firmware, channel databases, and DVR buffers on K9EUGY8S0M-CCK0-class raw TLC V-NAND connected to an SoC's integrated NAND controller. The 256 Gb density covers typical 8-32 GB eMMC-class capacity requirements with a single stacked package, and TLC cost meets consumer BOM targets. SoC boot ROMs usually require a specific toggle-mode profile, so confirm the SoC's supported Samsung NAND list. Because these products run continuous background recording, wear-leveling configuration and TV-logging write amplification should be tuned to keep TLC endurance within the 3-5 year product lifetime.
Recommandé
Networking and Router Storage
Enterprise Wi-Fi routers, mesh nodes, and NVR gateways use K9EUGY8S0M-CCK0-class V-NAND for firmware image storage, container filesystems, and local video buffering. The TLC density enables feature-rich firmware images plus persistent journals without a separate NOR boot device in many designs (boot code typically remains in NOR/SPINOR, with rootfs on this NAND). Raw NAND requires the SoC's NAND controller to implement ECC and bad-block handling at boot; verify the bootloader chain supports this Samsung generation. Consider temperature derating for passive-cooled network equipment enclosures, since sustained DVR writes heat the FBGA above ambient.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9EUGY8S0M-CCK0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9EUGY8S0M-BCK0 | K9DUGY8S0M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|---|---|
| Package | FBGA (Samsung V-NAND molded BGA) | FBGA - same family package | FBGA - same family package | FBGA - same family package |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| Grade Suffix | CCK0 | BCK0 | CCK0 | CCK0 |
| Controller Firmware Requirement | Samsung NAND profile in controller support list | Same profile requirement | K9DU profile | K9CH profile |
| Primary Use Case | SSD / USB / embedded storage | SSD / USB / embedded storage | Cost-optimized storage builds | Alternate density tiers |
Principaux différenciateurs
- Latest same-die family sourcing option (vs K9DUGY8S0M-CCK0)
- Dual-sourcing within identical silicon (vs K9EUGY8S0M-BCK0)
- CCK0 grade consistency (vs K9CHGY8S5C-CCK0)
Notes de conception
Never connect K9EUGY8S0M-CCK0 directly to a general-purpose bus. As raw TLC V-NAND, it requires a dedicated controller or SoC NAND engine providing LDPC/ECC, bad-block management, wear leveling, and correct toggle-mode timing. Using a controller firmware that does not list this Samsung generation in its supported NAND profile table will cause boot failures or silent data corruption. Always validate with the controller vendor's qualification suite before mass production.
NAND devices in this family use separate core and I/O supplies (VCC and VCCQ) with defined power-up sequencing in the Samsung datasheet. Because the exact voltage values for this MPN are NDA datasheet items, do not copy rail voltages from older-generation schematics - obtain the K9EUGY8S0M datasheet and confirm. Add bulk plus 0.1uF decoupling at each supply ball group and ensure power-fail protection holds program-in-progress operations within the datasheet's tVCC_rise/fall constraints.
For FBGA NAND, fan out signal balls with length-matched, daisy-chained routing to the controller, keeping the DQ/RE/WP command group stub-free and within the interface's flight-time budget. Use a solid ground reference plane directly under the NAND-to-controller nets, and place series termination per the reference design in the controller vendor's layout guide. High-layer-count V-NAND draws higher peak current during program operations than planar NAND, so verify plane copper and via stitching for the return path.
Informations de conformité
Compliance status for this MPN was not stated in the retrieved web data. Samsung consumer NAND is typically RoHS-compliant, but per data authenticity policy the status must be confirmed from Samsung's official environmental documentation rather than assumed.
