K9F1G08U0B-PCB0 vs K9F2808UOC-PCB0 Comparaison
Comparaison détaillée côte à côte de K9F1G08U0B-PCB0 par Samsung Electronics et K9F2808UOC-PCB0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9F1G08U0B-PCB0 - 1Gbit SLC NAND Flash 3.3V 48-TSOP | Samsung
K9F1G08U0B-PCB0 ✓ Actif
Comparaison des spécifications
| Paramètre | K9F1G08U0B-PCB0 | K9F2808UOC-PCB0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,70 | $1,68 |
| Type de mémoire | SLC NAND Flash (Non-Volatile) | NAND Flash (SLC, Small-Page) |
| Density | 1 Gbit (128 M x 8 bit) + 32 Mbit spare | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (3.3 V typical) | — |
| Interface | 8-bit parallel (multiplexed address/data/command) | — |
| Page Size | 2 Kbyte + 64 byte spare | 528 bytes (512 main + 16 spare) |
| Block Size | 128 Kbyte + 4 Kbyte spare | 16 pages (16 KiB + 256 spare bytes) |
| Page Program Time (typ) | 300 us (max 700 us) | — |
| Block Erase Time (typ) | 2 ms (max 3 ms) | — |
| Endurance | 100 K program/erase cycles per block | — |
| Data Retention | 10 years | — |
| Température de fonctionnement | 0C to +70C (commercial grade) | Commercial / Industrial (C, I grade) |
| Boîtier | 48-pin TSOP-I (Type I), 0.5 mm pitch | — |
| Type de montage | Surface Mount | — |
| Package Material | Molded plastic (high-quality thermal grade) | — |
| Access Time | 25 us (max) | — |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Memory Density | — | 128 Mbit (16M x 8) |
| Organisation de la mémoire | — | 16M x 8 bit |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Access Time | — | 50 ns |
| Package Options | — | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | — | x8 |
| Command Set | — | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | — | R/B# open-drain ready/busy |
| Technology Node | — | Samsung 2nd-generation SLC NAND |
| Cell Type | — | Single-Level Cell (SLC) |
| Programming Model | — | Page program, block erase |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS status from Samsung datasheet] |