K9F1G08U0B-PCB0 vs K9F2808UOC-PCB0 Сравнение
Подробное сравнение бок о бок K9F1G08U0B-PCB0 от Samsung Electronics и K9F2808UOC-PCB0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9F1G08U0B-PCB0 - 1Gbit SLC NAND Flash 3.3V 48-TSOP | Samsung
K9F1G08U0B-PCB0 ✓ Активен
Сравнение характеристик
| Параметр | K9F1G08U0B-PCB0 | K9F2808UOC-PCB0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | NRND |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,70 | $1,68 |
| Тип памяти | SLC NAND Flash (Non-Volatile) | NAND Flash (SLC, Small-Page) |
| Density | 1 Gbit (128 M x 8 bit) + 32 Mbit spare | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (3.3 V typical) | — |
| Интерфейс | 8-bit parallel (multiplexed address/data/command) | — |
| Page Size | 2 Kbyte + 64 byte spare | 528 bytes (512 main + 16 spare) |
| Block Size | 128 Kbyte + 4 Kbyte spare | 16 pages (16 KiB + 256 spare bytes) |
| Page Program Time (typ) | 300 us (max 700 us) | — |
| Block Erase Time (typ) | 2 ms (max 3 ms) | — |
| Endurance | 100 K program/erase cycles per block | — |
| Data Retention | 10 years | — |
| Рабочая температура | 0C to +70C (commercial grade) | Commercial / Industrial (C, I grade) |
| Корпус | 48-pin TSOP-I (Type I), 0.5 mm pitch | — |
| Тип монтажа | Surface Mount | — |
| Package Material | Molded plastic (high-quality thermal grade) | — |
| Access Time | 25 us (max) | — |
| Статус RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Memory Density | — | 128 Mbit (16M x 8) |
| Организация памяти | — | 16M x 8 bit |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Access Time | — | 50 ns |
| Package Options | — | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | — | x8 |
| Command Set | — | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | — | R/B# open-drain ready/busy |
| Technology Node | — | Samsung 2nd-generation SLC NAND |
| Cell Type | — | Single-Level Cell (SLC) |
| Programming Model | — | Page program, block erase |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS status from Samsung datasheet] |