K9HQGY8S5M vs K9HUGY8J5B-BCK0 Comparaison
Comparaison détaillée côte à côte de K9HQGY8S5M par Samsung Electronics et K9HUGY8J5B-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActifComparaison des spécifications
| Paramètre | K9HQGY8S5M | K9HUGY8J5B-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| Interface | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | [DATA_NEEDED: asynchronous/toggle DDR] |
| Density | [DATA_NEEDED: total bit density] | [DATA_NEEDED: device density] |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | — |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Product Family | — | K9HUG (V-NAND flash) |
| Type de mémoire | — | NAND Flash (3D V-NAND) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Organisation de la mémoire | — | [DATA_NEEDED: page/block organization] |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |
| Boîtier | — | [DATA_NEEDED: package code, e.g. FBGA] |