K9HQGY8S5M vs K9HUGY8J5B-BCK0 Vergleich
Detaillierter Direktvergleich von K9HQGY8S5M von Samsung Electronics und K9HUGY8J5B-BCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ AktivSpezifikationsvergleich
| Parameter | K9HQGY8S5M | K9HUGY8J5B-BCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| Schnittstelle | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | [DATA_NEEDED: asynchronous/toggle DDR] |
| Density | [DATA_NEEDED: total bit density] | [DATA_NEEDED: device density] |
| Versorgungsspannung | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | — |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Product Family | — | K9HUG (V-NAND flash) |
| Speichertyp | — | NAND Flash (3D V-NAND) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| Speicherorganisation | — | [DATA_NEEDED: page/block organization] |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |
| Gehäuse | — | [DATA_NEEDED: package code, e.g. FBGA] |