K9IUGY8J7B-BCK0 vs K9JUGY8J5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9IUGY8J7B-BCK0 par Samsung Electronics et K9JUGY8J5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
K9IUGY8J7B-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9IUGY8J7B-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $7,60 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| MPN | K9IUGY8J7B-BCK0 | — |
| Product Type | V-NAND Flash (raw NAND) | — |
| Density | 1 Tbit | 1 Tb (128 GB) |
| Cell Type | TLC (Triple-Level Cell, 3 bits/cell) | TLC (Triple-Level Cell) |
| Technology | Samsung V-NAND (3D vertical NAND) | — |
| Speed Grade | BCK0 | — |
| Interface | [DATA_NEEDED: interface type and data rate] | [DATA_NEEDED: toggle/ONFI mode] |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | — |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | [DATA_NEEDED: package code / ball count] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Statut du cycle de vie | Active | — |
| Type de mémoire | — | NAND Flash - V-NAND (TLC) |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| Boîtier | — | [DATA_NEEDED: BGA package code and dimensions] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |