K9IUGY8J7B-BCK0 vs K9JUGY8J5C-CCK0 比較
詳細な並列比較: K9IUGY8J7B-BCK0 メーカー: Samsung Electronics および K9JUGY8J5C-CCK0 メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
K9IUGY8J7B-BCK0 ✓ 生産中仕様比較
| パラメータ | K9IUGY8J7B-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $7.60 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| MPN | K9IUGY8J7B-BCK0 | — |
| Product Type | V-NAND Flash (raw NAND) | — |
| Density | 1 Tbit | 1 Tb (128 GB) |
| Cell Type | TLC (Triple-Level Cell, 3 bits/cell) | TLC (Triple-Level Cell) |
| Technology | Samsung V-NAND (3D vertical NAND) | — |
| Speed Grade | BCK0 | — |
| インターフェース | [DATA_NEEDED: interface type and data rate] | [DATA_NEEDED: toggle/ONFI mode] |
| 電源電圧 | [DATA_NEEDED: VCC range] | — |
| メモリ構成 | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | [DATA_NEEDED: package code / ball count] | — |
| 動作温度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range] |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ライフサイクル状態 | Active | — |
| メモリタイプ | — | NAND Flash - V-NAND (TLC) |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| パッケージ | — | [DATA_NEEDED: BGA package code and dimensions] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| MSLレベル | — | [DATA_NEEDED: moisture sensitivity level] |