K9KUGY8J7C-BCK0 vs K9JUGY8J5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9KUGY8J7C-BCK0 par Samsung Electronics et K9JUGY8J5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9KUGY8J7C-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,55 | $7,60 |
| Type de mémoire | NAND Flash (TLC V-NAND) | NAND Flash - V-NAND (TLC) |
| Density | 1 Tb | 1 Tb (128 GB) |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | TLC (Triple-Level Cell) |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI mode] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | [DATA_NEEDED: VCCQ range] |
| Page Size | [DATA_NEEDED: page size in KB] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | — |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: temperature range] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| Interface | — | [DATA_NEEDED: toggle/ONFI mode] |
| Boîtier | — | [DATA_NEEDED: BGA package code and dimensions] |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |