K9LUGY8J7D-BCK0 vs K9NUGY8R6B-BCQ0 Comparaison

Comparaison détaillée côte à côte de K9LUGY8J7D-BCK0 par Samsung Electronics et K9NUGY8R6B-BCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9LUGY8J7D-BCK0 K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 ✓ Actif
Samsung Electronics
K9NUGY8R6B-BCQ0 K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 ✓ Actif

Comparaison des spécifications

Paramètre K9LUGY8J7D-BCK0 K9NUGY8R6B-BCQ0
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs Memory ICs
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory —
Memory Technology V-NAND (3D NAND flash) —
Density [DATA_NEEDED: density] [DATA_NEEDED: total density]
Cell Type [DATA_NEEDED: cell type (MLC/TLC/QLC)] —
Organisation de la mémoire [DATA_NEEDED: organization] [DATA_NEEDED: page/block organization]
Interface [DATA_NEEDED: interface type] Asynchronous NAND I/O (command/address/data multiplexed)
Tension d'alimentation [DATA_NEEDED: VCC range] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Read Time (typ) [DATA_NEEDED: tR] —
Endurance [DATA_NEEDED: P/E cycles] —
Température de fonctionnement [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range]
Boîtier [DATA_NEEDED: package type and dimensions] —
Type de montage Surface Mount Surface Mount
Statut RoHS unknown unknown
Product Family — K9NUGY series NAND flash
Type de mémoire — NAND Flash
Cell Technology — [DATA_NEEDED: SLC/MLC/TLC]
Supply Voltage VCC — [DATA_NEEDED: VCC range]
VCCQ Voltage — [DATA_NEEDED: VCCQ range]
Page Read Time — [DATA_NEEDED: tR]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Program/Erase Cycles — [DATA_NEEDED: endurance]
Data Retention — [DATA_NEEDED: retention]
Package Type — [DATA_NEEDED: package code]

Fiches techniques et ressources

Parcourir tous les produits Créer un BOM Demander un devis