K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
Référence : K9NUGY8R6B-BCQ0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9NUGY8R6B-BCQ0 Présentation
NAND flash memory is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, it sits below DRAM in speed but offers far higher density and lower cost per bit, making it the dominant technology for SSDs, eMMC storage, USB drives, memory cards, and embedded flash. Samsung is one of the world's largest NAND flash manufacturers, and the K9 family of raw NAND devices has been an industry reference for decades.
Key characteristics of this device class include high storage density per package, page-oriented program and erase operations, and a command/address/data multiplexed I/O interface. Error-correcting code (ECC) handling is performed by the host controller, as raw NAND devices do not manage ECC internally. Program and erase endurance, data retention, and block organization parameters should be confirmed from the official Samsung datasheet before design-in.
Typical applications include solid-state drives, embedded storage modules, set-top boxes, digital televisions, network-attached storage, industrial data loggers, and removable media. In these systems the NAND device works alongside a flash controller that manages wear leveling, bad-block management, and ECC to deliver reliable long-term storage.
Design considerations include power-supply decoupling on the VCC rail, careful PCB layout of the multiplexed address/data bus for signal integrity, and respect for tWB/tRR timing parameters during program operations. Ensure the host controller ECC strength matches the datasheet requirement for the device's NAND cell technology, as newer NAND generations require stronger correction capability.
This page synthesizes cross-reference candidates, application guidance, and structured sourcing data in one place, adding value beyond the raw manufacturer datasheet listing.
Alternatives de remplacement direct pour K9NUGY8R6B-BCQ0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9NUGY8R6B-BCQ0 (même facteur de forme et même empreinte) — différant par Memory Type, RoHS Status, Cell Type, Memory Technology, Product Family.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9MUGY8R4A-BCQ0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
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Voir la fiche technique →K9MUGY8R4A-CCQ0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9LUGY8J7D-BCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
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Voir la fiche technique →K9KUGY8J7C-BCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$9.55 / unité
Voir la fiche technique →K9JUGY8J5C-BCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9NUGY8R6B-BCQ0 Valeurs maximales et caractéristiques électriques
| Manufacturer | Samsung Electronics |
| Product Family | K9NUGY series NAND flash |
| Type de mémoire | NAND Flash |
| Interface | Asynchronous NAND I/O (command/address/data multiplexed) |
| Type de montage | Surface Mount |
| Statut RoHS | unknown |
Guide de configuration des broches du K9NUGY8R6B-BCQ0 standard
Configuration des broches du K9NUGY8R6B-BCQ0 (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9NUGY8R6B-BCQ0.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9NUGY8R6B-BCQ0 convient pour 6 applications: Solid-State Drive (SSD) Storage, Embedded Storage Modules (eMMC/eUFS-class systems), Digital TV and Set-Top Box Firmware Storage, Industrial Data Loggers, Network Attached Storage and Routers, Removable Media and USB Storage.
Solid-State Drive (SSD) Storage
Raw NAND flash devices of this class form the storage core of client and enterprise SSDs, where multiple NAND packages are connected to a single SSD controller that manages wear leveling, garbage collection, and ECC. The K9NUGY8R6B-BCQ0's BGA surface-mount package enables high board density, and the standard asynchronous NAND interface integrates directly with mainstream SSD controller silicon. In this role the NAND's program/erase endurance and page program time directly determine drive write endurance and sustained throughput. Designers should match the controller's supported NAND generations and ECC strength to the datasheet requirements, and verify thermal design so that sustained write workloads keep the package within its specified operating temperature range.
Recommandé
Embedded Storage Modules (eMMC/eUFS-class systems)
Embedded storage designs combine raw NAND with a controller on a single module to provide managed flash storage for smart TVs, set-top boxes, industrial PCs, and networking equipment. The K9NUGY8R6B-BCQ0 serves as the non-volatile data store, while the module controller hides NAND-specific behaviors such as bad-block management and wear leveling from the host. Its high per-package density reduces component count and board area compared with lower-density alternatives. When designing such modules, firmware must implement the Samsung-specified bad-block marker scheme, and power-fail protection must ensure that interrupted program operations do not corrupt previously written pages. Verify the exact page and block organization from the Samsung datasheet before porting existing firmware.
Recommandé
Digital TV and Set-Top Box Firmware Storage
Digital televisions and set-top boxes use raw NAND to store firmware, channel databases, application images, and user recordings. The K9NUGY8R6B-BCQ0 fits this application because its high density accommodates increasingly large firmware images and DVR buffers, while its standard NAND interface connects to the SoC's built-in memory controller. Consumer SoCs typically include hardware ECC engines sized for the NAND generation they were designed against, so the NAND generation must match the SoC support list. Typical designs place the NAND on short, matched traces to the SoC and use the manufacturer's recommended decoupling network, since program operations inject current pulses onto shared supply rails during video recording.
Recommandé
Industrial Data Loggers
Industrial data loggers record sensor readings, machine health data, and event logs over multi-year service lives, requiring storage that retains data through power loss and harsh temperatures. A raw NAND device such as the K9NUGY8R6B-BCQ0 provides the required endurance and density when paired with a controller performing wear leveling, power-fail recovery, and error correction. The page-program architecture allows efficient sequential logging, and the BGA package withstands vibration better than socketed media. Designers must confirm the industrial temperature range and retention specifications from the Samsung datasheet, implement brown-out detection to stop program operations cleanly, and reserve spare blocks to sustain write endurance across the product's service life.
Recommandé
Network Attached Storage and Routers
Networking equipment uses NAND flash for boot images, configuration stores, firmware upgrades, and local caching. The K9NUGY8R6B-BCQ0's high density supports dual-firmware banking for safe over-the-air upgrades, where a failure during update leaves the previous image intact. Its standard NAND interface works with the memory controllers integrated into networking SoCs, and the surface-mount BGA package suits the compact layouts of router and NAS boards. Reliability is the primary requirement here: the design should implement read-retry and scrubbing in firmware to correct read disturbances over long powered-on periods, and the PCB should route the NAND bus away from switching regulator nodes to preserve signal integrity on the multiplexed I/O lines.
Recommandé
Removable Media and USB Storage
USB flash drives and memory card products use raw NAND die combined with compact single-chip controllers. The K9NUGY8R6B-BCQ0 can serve this market when its package outline and density align with the drive's form factor and capacity targets. In this cost-sensitive segment the NAND's cell technology determines cost per gigabyte, while its page program time influences sequential write speed as perceived by end users. Controllers for removable media implement simplified wear leveling sized to typical consumer duty cycles. Design teams should verify the NAND's voltage range matches the controller's power tree, typically a single low-voltage rail in portable products, and confirm that the controller ECC strength satisfies the Samsung datasheet requirement for this NAND generation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9NUGY8R6B-BCQ0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9MUGY8R4A-BCQ0 | K9MUGY8R4A-CCQ0 | K9LUGY8J7D-BCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
Principaux différenciateurs
- Newer UGY generation designation (vs K9JUGY8J5C-BCK0)
- Same-family substitution path (vs K9MUGY8R4A-BCQ0)
- Standard NAND interface compatibility (vs K9MUGY8R4A-CCQ0)
Notes de conception
Raw NAND devices draw pulsed supply current during program and erase operations, with the erase phase typically the highest-current event. Place 100 nF ceramic decoupling capacitors immediately adjacent to each VCC and VCCQ ball, plus bulk capacitance per the Samsung datasheet recommendation. Confirm the exact VCC/VCCQ ranges from the official datasheet before finalizing the power tree, since NAND generations differ in their core versus I/O voltage domains. Shared rails with other memory should be locally regulated or well decoupled to prevent program-time droop.
The NAND interface multiplexes command, address, and data on one 8-bit or 16-bit bus with control signals (CLE, ALE, RE, WE). Keep these traces short and length-matched within the group, and route away from switching regulator inductors and clock lines. For BGA-packaged NAND, fan out with controlled-impedance breakout and reference the bus to a solid ground plane. Verify setup/hold compliance at your maximum clock rate using the datasheet AC timing table; derate for the full operating temperature range, not just room temperature.
The most frequent raw NAND integration errors are (1) firmware ECC strength below the datasheet requirement for the NAND cell technology, causing field data corruption over time, (2) missing power-fail handling that corrupts pages during brown-outs mid-program, and (3) PCB footprints drawn from an older package revision. Always pull the footprint and ball map from the current Samsung datasheet, implement the specified bad-block management scheme, and validate read-retry behavior across the full temperature range before mass production.
Informations de conformité
Compliance data was not present in verified web data as of 2026-09-04. Check Samsung's product page for environmental declarations.
