K9LUGY8J7D-CCK0 vs K9MUGY8R4A-CCQ0 Comparaison
Comparaison détaillée côte à côte de K9LUGY8J7D-CCK0 par Samsung Electronics et K9MUGY8R4A-CCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActifSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9LUGY8J7D-CCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Type de mémoire | NAND Flash (V-NAND) | — |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| Boîtier | BGA (surface mount) | — |
| Type de montage | Surface Mount | Surface Mount |
| Interface | [DATA_NEEDED: interface type / toggle DDR mode] | — |
| Density | [DATA_NEEDED: total density (bits)] | [DATA_NEEDED: total density] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Tension d'alimentation | [DATA_NEEDED: supply voltage (V)] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Cell Type | — | [DATA_NEEDED: cell type (MLC/TLC)] |
| Organisation de la mémoire | — | [DATA_NEEDED: page/block organization] |
| Type d'interface | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |
| Package Type | — | [DATA_NEEDED: package type and pin count] |