MC9S12DP512CPVE vs MC9S12DG128CPV Comparaison
Comparaison détaillée côte à côte de MC9S12DP512CPVE par NXP Semiconductors et MC9S12DG128CPV par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MC9S12DP512CPVE | MC9S12DG128CPV |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Microcontrollers | Microcontrollers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $17,85 |
| Product Type | 16-bit HCS12 CISC microcontroller | — |
| Maximum Operating Frequency | 25 MHz | — |
| Internal Flash Memory | 512 KB | — |
| Internal RAM | 12 KB | — |
| EEPROM | 4 KB | 2 KB |
| ADC | Two 8-channel, 10-bit ADCs | — |
| Serial Communication Interfaces | 2 asynchronous serial communication interfaces | — |
| Enhanced Capture Timer | 8-channel IC/OC enhanced capture timer | — |
| Pulse-Width Modulator | 8-channel PWM | — |
| General-Purpose I/O | 91 pins | — |
| Boîtier | 112-pin LQFP (20x20) | — |
| Core Architecture | HCS12, CISC | HCS12 (16-bit CISC) |
| Operating Supply | 2.5 V / 5 V | — |
| Type de montage | Surface Mount | Surface Mount |
| Series | MC9S12 | — |
| Type de mémoire | Flash | — |
| Automotive Positioning | MC9S12D family designed for automotive multiplexing applications | — |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| Boîtier / Format | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Température de fonctionnement | — | -40 C to +125 C (automotive) |
| Niveau MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Statut RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |