MC9S12DP512CPVE vs MC9S12DG128CPV Сравнение
Подробное сравнение бок о бок MC9S12DP512CPVE от NXP Semiconductors и MC9S12DG128CPV от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MC9S12DP512CPVE | MC9S12DG128CPV |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Microcontrollers | Microcontrollers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $17,85 |
| Product Type | 16-bit HCS12 CISC microcontroller | — |
| Maximum Operating Frequency | 25 MHz | — |
| Internal Flash Memory | 512 KB | — |
| Internal RAM | 12 KB | — |
| EEPROM | 4 KB | 2 KB |
| ADC | Two 8-channel, 10-bit ADCs | — |
| Serial Communication Interfaces | 2 asynchronous serial communication interfaces | — |
| Enhanced Capture Timer | 8-channel IC/OC enhanced capture timer | — |
| Pulse-Width Modulator | 8-channel PWM | — |
| General-Purpose I/O | 91 pins | — |
| Корпус | 112-pin LQFP (20x20) | — |
| Core Architecture | HCS12, CISC | HCS12 (16-bit CISC) |
| Operating Supply | 2.5 V / 5 V | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Series | MC9S12 | — |
| Тип памяти | Flash | — |
| Automotive Positioning | MC9S12D family designed for automotive multiplexing applications | — |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| Корпус / Типоразмер | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Рабочая температура | — | -40 C to +125 C (automotive) |
| Уровень MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Статус RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |