MPX5010DP vs MPX5010D Comparaison
Comparaison détaillée côte à côte de MPX5010DP par NXP Semiconductors et MPX5010D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ ActifComparaison des spécifications
| Paramètre | MPX5010DP | MPX5010D |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,60 | $8,25 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | — |
| Sensitivity | 450 mV/kPa (typical) | — |
| Plage de tension de sortie | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tension d'alimentation | 4.75 V to 5.25 V (5 V typical) | 4.75 V to 5.25 V |
| Courant d'alimentation | [DATA_NEEDED: supply current mA] | [DATA_NEEDED: mA] |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| Température de fonctionnement | 0 C to +85 C (compensated) | 0C to +85C (industrial-grade derivative supported to 40C to +125C) |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| Boîtier | 6-SIP Module | — |
| Type de sortie | Analog, ratiometric | Analog Voltage |
| Type de montage | Through-hole (SIP) | Through-hole module |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | — |
| Statut RoHS | Compliant | [DATA_NEEDED: verified per datasheet] |
| Manufacturer | — | NXP Semiconductors |
| Operating Pressure | — | 1.45 PSI (10 kPa) max |
| Port Size | — | Dual axial port (Differential) |
| Accuracy | — | [DATA_NEEDED: %FS] |
| Boîtier / Format | — | 6-SIP Module (Case 867-08) |
| Sensor Technology | — | Piezoresistive MEMS |
| Signal Conditioning | — | On-chip, temperature compensated and calibrated |
| Response Time | — | [DATA_NEEDED: ms] |
| Media Compatibility | — | Dry non-corrosive gases (air-referenced diaphragm) |