MPX5010DP vs MPX5010D Comparação
Comparação detalhada lado a lado de MPX5010DP por NXP Semiconductors e MPX5010D por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ AtivoComparação de especificações
| Parâmetro | MPX5010DP | MPX5010D |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Pressure Sensors | Pressure Sensors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $9,60 | $8,25 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | — |
| Sensitivity | 450 mV/kPa (typical) | — |
| Faixa de tensão de saída | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tensão de alimentação | 4.75 V to 5.25 V (5 V typical) | 4.75 V to 5.25 V |
| Corrente de alimentação | [DATA_NEEDED: supply current mA] | [DATA_NEEDED: mA] |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| Temperatura de operação | 0 C to +85 C (compensated) | 0C to +85C (industrial-grade derivative supported to 40C to +125C) |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| Encapsulamento | 6-SIP Module | — |
| Tipo de saída | Analog, ratiometric | Analog Voltage |
| Tipo de montagem | Through-hole (SIP) | Through-hole module |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | — |
| Status RoHS | Compliant | [DATA_NEEDED: verified per datasheet] |
| Manufacturer | — | NXP Semiconductors |
| Operating Pressure | — | 1.45 PSI (10 kPa) max |
| Port Size | — | Dual axial port (Differential) |
| Accuracy | — | [DATA_NEEDED: %FS] |
| Encapsulamento / Caixa | — | 6-SIP Module (Case 867-08) |
| Sensor Technology | — | Piezoresistive MEMS |
| Signal Conditioning | — | On-chip, temperature compensated and calibrated |
| Response Time | — | [DATA_NEEDED: ms] |
| Media Compatibility | — | Dry non-corrosive gases (air-referenced diaphragm) |