MPXV5010DP vs MPXV5100DP Comparaison
Comparaison détaillée côte à côte de MPXV5010DP par NXP Semiconductors et MPXV5100DP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPXV5100DP - 100kPa Differential Pressure Sensor, 5V, 8-SOP | NXP
MPXV5100DP ✓ ActifComparaison des spécifications
| Paramètre | MPXV5010DP | MPXV5100DP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $8,10 | $9,10 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload] | [DATA_NEEDED: maximum overload pressure] |
| Type de sortie | Analog, Ratiometric | Analog, Ratiometric Voltage |
| Plage de tension de sortie | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tension d'alimentation | 5 V nominal (4.75 V to 5.25 V) | 4.75 V to 5.25 V (nominal 5 V) |
| Accuracy | 5 % (over 0 C to 85 C) | — |
| Response Time | 1 ms typical | — |
| Température de fonctionnement | -40 C to +125 C | [DATA_NEEDED: operating temperature range] |
| Compensated Temperature | 0 C to 85 C | — |
| Port Style | Male, 0.13 in (3.3 mm) tube, Dual, Same Side | Dual horizontal ports, same side |
| Boîtier | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports | 8-BSOP (0.475 inch, 12.06 mm width), dual ports same side |
| Type de montage | Surface Mount | Surface Mount |
| Technology | Piezoresistive, MEMS, On-chip Signal Conditioned | — |
| Statut RoHS | Compliant | Compliant |
| Sensitivity | — | 45 mV/kPa (nominal) |
| Pressure Accuracy | — | +/- 5% (max, over compensated range) |
| Port Size | — | 0.13 inch (3.3 mm) tube |
| Sensor Technology | — | Piezoresistive (silicon MEMS) with on-chip signal conditioning |