MRF5S19100HR5 vs MRF5S19100HR Comparaison
Comparaison détaillée côte à côte de MRF5S19100HR5 par NXP Semiconductors et MRF5S19100HR par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF5S19100HR5 | MRF5S19100HR |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,40 | $44,00 |
| Type de transistor | LDMOS (RF Power) | — |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Boîtier / Format | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Type de montage | Chassis Mount / Flange | Flange / bolt-down, surface-mount RF |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| Statut RoHS | [DATA_NEEDED: rohs status] | Compliant (per NXP product page) |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | Gate-source ESD diodes integrated |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Family | — | MRF5S19090 / MRF5S19100 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 1930 - 1990 MHz |
| Output Power (Avg) | — | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | — | 100 W (typical, single tone) |
| Power Gain | — | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | — | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | — | 65 V |
| Drain Operating Voltage | — | 28 V nominal |
| Quiescent Current (IDQ) | — | 1000 mA |
| Gate-Source Voltage (Max) | — | [DATA_NEEDED: VGS maximum rating] |
| Température de jonction en fonctionnement | — | -40C to +200C |
| Boîtier | — | NI-780 (ceramic flange) |
| Polarity / Channel | — | N-Channel, dual-die |
| Sans halogène | — | [DATA_NEEDED: halogen-free status] |
| Storage Temperature | — | -65C to +200C (per NXP RF Power standard) |