MRF5S19100HR5 vs MRF5S19100HR Vergleich
Detaillierter Direktvergleich von MRF5S19100HR5 von NXP Semiconductors und MRF5S19100HR von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF5S19100HR5 | MRF5S19100HR |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,40 | $44,00 |
| Transistortyp | LDMOS (RF Power) | — |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Gehäuse / Bauform | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Montageart | Chassis Mount / Flange | Flange / bolt-down, surface-mount RF |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| RoHS-Status | [DATA_NEEDED: rohs status] | Compliant (per NXP product page) |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | Gate-source ESD diodes integrated |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Family | — | MRF5S19090 / MRF5S19100 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 1930 - 1990 MHz |
| Output Power (Avg) | — | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | — | 100 W (typical, single tone) |
| Power Gain | — | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | — | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | — | 65 V |
| Drain Operating Voltage | — | 28 V nominal |
| Quiescent Current (IDQ) | — | 1000 mA |
| Gate-Source Voltage (Max) | — | [DATA_NEEDED: VGS maximum rating] |
| Betriebs-Sperrschichttemperatur | — | -40C to +200C |
| Gehäuse | — | NI-780 (ceramic flange) |
| Polarity / Channel | — | N-Channel, dual-die |
| Halogenfrei | — | [DATA_NEEDED: halogen-free status] |
| Storage Temperature | — | -65C to +200C (per NXP RF Power standard) |