MRF6P9220HR3 vs MRFE6P9220HR3 Comparaison
Comparaison détaillée côte à côte de MRF6P9220HR3 par NXP Semiconductors et MRFE6P9220HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6P9220HR3 | MRFE6P9220HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $58,40 | $232,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6P9220HR3 | — |
| Type de transistor | N-Channel Lateral MOSFET (RF Power) | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | LDMOS, enhancement-mode | RF Power MOSFET |
| Drain-Source Voltage (VDS) | 28 V typical | — |
| Test Frequency | 880 MHz | 880 MHz |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) | — |
| Power Gain (Gp) | 20 dB typical | — |
| Drain Current at Test (ID) | [DATA_NEEDED: drain current at Pout test] | — |
| Quiescent Bias Current (IDQ) | 1.6 A typical | — |
| Drain Efficiency | [DATA_NEEDED: efficiency at test] | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) | — |
| Boîtier | NI-860C3 (ceramic, flange-mount) | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | Common-source, single-ended | Common source, 2 elements |
| Type de montage | Surface/chassis mount (flange to heatsink) | Surface Mount with copper heatsink pad |
| Application | Base-station PA, N-CDMA, industrial RF | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Mode | Enhancement mode | — |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Plage de température de fonctionnement | — | [DATA_NEEDED: Tj max / operating range] |
| Lead Free Status | — | Lead Free |