MRF6P9220HR3 vs MRFE6P9220HR3 비교
다음의 상세 나란히 비교: MRF6P9220HR3 제조: NXP Semiconductors 및 MRFE6P9220HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6P9220HR3 | MRFE6P9220HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $58.40 | $232.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6P9220HR3 | — |
| 트랜지스터 유형 | N-Channel Lateral MOSFET (RF Power) | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | LDMOS, enhancement-mode | RF Power MOSFET |
| Drain-Source Voltage (VDS) | 28 V typical | — |
| Test Frequency | 880 MHz | 880 MHz |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) | — |
| Power Gain (Gp) | 20 dB typical | — |
| Drain Current at Test (ID) | [DATA_NEEDED: drain current at Pout test] | — |
| Quiescent Bias Current (IDQ) | 1.6 A typical | — |
| Drain Efficiency | [DATA_NEEDED: efficiency at test] | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) | — |
| 패키지 | NI-860C3 (ceramic, flange-mount) | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | Common-source, single-ended | Common source, 2 elements |
| 실장 유형 | Surface/chassis mount (flange to heatsink) | Surface Mount with copper heatsink pad |
| Application | Base-station PA, N-CDMA, industrial RF | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Mode | Enhancement mode | — |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj max / operating range] |
| Lead Free Status | — | Lead Free |