MRF6S21100HR3 vs MRF8S21100HSR3 Comparaison
Comparaison détaillée côte à côte de MRF6S21100HR3 par NXP Semiconductors et MRF8S21100HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S21100HR3 | MRF8S21100HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $38,95 | $65,00 |
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Single | Single, push-pull N/A |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| Boîtier | NI-780H-2L (ceramic flange) | — |
| Type de montage | Surface Mount / bolt-down flange | Chassis / flange mount, screw-down |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | — |
| Statut RoHS | [DATA_NEEDED: explicit RoHS compliance statement] | Compliant (per NXP product family) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Boîtier / Format | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |