MRF6S21100HR3 vs MRF8S21100HSR3 비교
다음의 상세 나란히 비교: MRF6S21100HR3 제조: NXP Semiconductors 및 MRF8S21100HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6S21100HR3 | MRF8S21100HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $38.95 | $65.00 |
| 트랜지스터 유형 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Single | Single, push-pull N/A |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| 패키지 | NI-780H-2L (ceramic flange) | — |
| 실장 유형 | Surface Mount / bolt-down flange | Chassis / flange mount, screw-down |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | — |
| RoHS 상태 | [DATA_NEEDED: explicit RoHS compliance statement] | Compliant (per NXP product family) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| 패키지 / 케이스 | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |